Electronic device package and fabricating method thereof

ABSTRACT

Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 μm or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

CROSS-REFERENCE TO RELATED APPLICATIONS/INCORPORATION BY REFERENCE

The present application is a CONTINUATION of U.S. patent applicationSer. No. 15/248,687, filed Aug. 26, 2016, titled “ELECTRONIC DEVICEPACKAGE AND FABRICATING METHOD THEREOF,” issuing as U.S. Pat. No.9,831,282, which is a CONTINUATION of U.S. patent application Ser. No.14/817,477, filed Aug. 4, 2015, titled “PACKAGE OF FINGER PRINT SENSORAND FABRICATING METHOD THEREOF,” now U.S. Pat. No. 9,431,447, which is aCONTINUATION of U.S. patent application Ser. No. 14/082,482, filed Nov.18, 2013, entitled “PACKAGE OF FINGER PRINT SENSOR AND FABRICATINGMETHOD THEREOF,” now U.S. Pat. No. 9,129,873, which makes reference to,claims priority to, and claims the benefit of Korean Patent ApplicationNo. KR 10-2012-0131963 filed on Nov. 20, 2012 in the Korean IntellectualProperty Office and titled “PACKAGE OF FINGER PRINT SENSOR ANDFABRICATING METHOD THEREOF,” the contents of each of which are herebyincorporated herein by reference in their entirety.

FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

[Not Applicable]

SEQUENCE LISTING

[Not Applicable]

MICROFICHE/COPYRIGHT REFERENCE

[Not Applicable]

BACKGROUND

Present finger print sensor packages and methods for fabrication thereofare inadequate. Further limitations and disadvantages of conventionaland traditional approaches will become apparent to one of skill in theart, through comparison of such approaches with various aspects of thepresent disclosure as set forth in the remainder of the presentapplication with reference to the drawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present disclosure, and are incorporated in andconstitute a part of this specification. The drawings illustrate exampleembodiments of the present disclosure and, together with thedescription, serve to explain principles of the present disclosure. Inthe drawings:

FIG. 1 is a cross-sectional view of a package of a finger print sensoraccording to an example embodiment of the present disclosure.

FIG. 2 is a plan view illustrating a semiconductor die, an encapsulantand a first redistribution layer in a package of a finger print sensoraccording to another example embodiment of the present disclosure.

FIG. 3 is a cross-sectional view of a package of a finger print sensoraccording to still another example embodiment of the present disclosure.

FIG. 4 is a flowchart illustrating a fabricating method of a package ofa finger print sensor according to an example embodiment of the presentdisclosure.

FIGS. 5A to 5K are cross-sectional views sequentially illustratingexample process steps of the fabricating method of a package of a fingerprint sensor shown in FIG. 4.

FIG. 6 is a flowchart illustrating a fabricating method of a package ofa finger print sensor according to another example embodiment of thepresent disclosure.

FIGS. 7A to 7K are cross-sectional views sequentially illustratingexample process steps of the fabricating method of a package of a fingerprint sensor shown in FIG. 6.

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same or similar elements.

DETAILED DESCRIPTION

Various aspects of the present disclosure relate to a package of afinger print sensor and a fabricating method thereof. For example,various aspects of the present disclosure relate to a package of afinger print sensor and a fabricating method thereof, which canfabricate an ultra-slim finger print sensor having a thickness of 500 μmor less without using a separate printed circuit board (PCB).

Semiconductor packages are used in a wide variety of products. Accordingto the recent tendency toward slimness and miniaturization of theproducts, attempts to reduce the size of semiconductor packages arebeing made. To this end, some attention is being focused on a flip chippackage in which a solder bump is directly formed on a surface of asemiconductor die and a through silicone via (TSV) package in which aTSV is formed in a bond pad of a semiconductor die. The flip chippackage or the TSV package generally comprises a redistribution layer(RDL) connected to the bond pad of the semiconductor die to redistributea portion, for example a contact, to be connected to a solder bump. Invarious example scenarios, RDL design may be important in fabricating asemiconductor package. However, the RDL design is often performed in alimited area, making an RDL pattern complicated and requiring aconsiderable amount of time.

In accordance with various aspects of the present disclosure, there isprovided a package of a finger print sensor and a fabricating methodthereof, which for example can fabricate an ultra-slim finger printsensor having a thickness of 500 μm or less without using a separateprinted circuit board (PCB).

According to various aspects of the present disclosure, there isprovided an example finger print sensor package comprising asemiconductor die that comprises a first surface having a sensor and aplurality of bond pads formed thereon and a second surface facing thefirst surface (e.g., on a side of the semiconductor die opposite thefirst surface), where the second surface is enclosed by an encapsulant,a first passivation layer covering the first surface of thesemiconductor die and having openings patterned to expose the bond pads,first redistribution layers (RDLs) electrically connected to the bondpads exposed through the first passivation layer, vias electricallyconnected to the first RDLs and formed to pass through the encapsulant,second RDLs electrically connected to the vias and formed on theencapsulant, a second passivation layer exposing the second RDLs andformed to cover the second RDLs and the encapsulant, and land gridarrays (LGAs) electrically connected to the second RDLs exposed throughthe second passivation layer.

The first RDLs may, for example, be formed while filling the openings.

The first RDLs may, for example, extend to the outside of thesemiconductor die (e.g., extend to a position outside the footprint ofthe semiconductor die).

One end of each of the first RDLs may, for example, be electricallyconnected to each of the bond pads, and the other end of each of thefirst RDLs may, for example, be connected to the vias.

The finger print sensor package may, for example, further comprise aprotection layer covering the first passivation layer and the firstRDLs.

The protection layer and the encapsulant may, for example, be made ofthe same material.

At least one of the first RDLs may, for example, be formed as a groundpattern for preventing static electricity.

According to various aspects of the present disclosure, there isprovided an example package of a finger print sensor, the finger printsensor package comprising a semiconductor die that comprises a firstsurface having a sensor and a plurality of bond pads formed thereon anda second surface facing the first surface (e.g., on a side of thesemiconductor die opposite the first surface); an encapsulant enclosingside surfaces of the semiconductor die, excluding the first and secondsurfaces; a first lower passivation layer covering the first surface ofthe semiconductor die and having openings patterned to expose the bondpads; first redistribution layers (RDLs) electrically connected to thebond pads exposed through the first lower passivation layer; a firstupper passivation layer covering the second surface of the semiconductordie; vias electrically connected to the first RDLs and formed to passthrough the encapsulant; second RDLs electrically connected to the viasand formed on the first upper passivation layer; a second upperpassivation layer exposing the second RDLs and covering the second RDLsand the first upper passivation layer; and solder balls electricallyconnected to the second RDLs exposed through the second upperpassivation layer.

The first RDLs may, for example, be formed while filling the openings.

The first RDLs may, for example, extend to the outside of thesemiconductor die (e.g., extend to a position outside the footprint ofthe semiconductor die).

One end of each of the first RDLs may, for example, be electricallyconnected to each of the bond pads and the other end of each of thefirst RDLs may, for example, be connected to the vias.

The finger print sensor package may, for example, further comprise asecond lower passivation layer covering the first lower passivationlayer and the first RDLs.

The second lower passivation layer and the encapsulant may, for example,be made of the same material.

At least one of the first RDLs may, for example, be formed as a groundpattern for preventing static electricity.

According to various aspects of the present disclosure, there isprovided an example fabricating method of a package of a finger printsensor, the fabricating method comprising providing a semiconductor diethat comprises a first surface having a sensor and a plurality of bondpads formed thereon and a second surface facing the first surface (e.g.,on a side of the semiconductor die opposite the first surface), formingan encapsulant on the second surface, forming a first passivation layercomprising openings exposing the bond pads on the first surface of thesemiconductor die, forming first redistribution layers (RDLs)electrically connected to the bond pads exposed through the firstpassivation layer, forming vias electrically connected to the first RDLsand formed to pass through the encapsulant, forming second RDLselectrically connected to the vias and formed on the encapsulant,forming a second passivation layer covering the second RDLs and theencapsulant and exposing the second RDLs, and forming one or more landgrid arrays (LGAs) electrically connected to the exposed second RDLs.

The forming of the first RDLs may, for example, comprise forming thefirst RDLs to fill the openings.

The forming of the first RDLs may, for example, comprise forming thefirst RDLs to extend to the outside of the semiconductor die (e.g.,extend to a position outside the footprint of the semiconductor die).

The forming of the first RDLs may, for example, comprise forming thefirst RDLs such that one end of each of the first RDLs is electricallyconnected to each of the bond pads and the other end of each of thefirst RDLs may be connected to the vias.

After the forming of the first RDLs, the fabricating method may, forexample, further comprise forming a protection layer to cover the firstpassivation layer and the first RDLs.

Before the forming of the vias, the fabricating method may, for example,further comprise grinding the encapsulant.

After the forming of the LGAs, the fabricating method may, for example,further comprise grinding the protection layer for removal.

According to various aspects of the present disclosure, there isprovided an example fabricating method of a package of a finger printsensor, the fabricating method comprising providing a semiconductor diethat comprises a first surface having a sensor and a plurality of bondpads formed thereon and a second surface facing the first surface (e.g.,on a side of the semiconductor die opposite the first surface), formingan encapsulant enclosing side surfaces of the semiconductor die,excluding the first and second surfaces, forming a first lowerpassivation layer having openings exposing the bond pads on the firstsurface of the semiconductor die, forming first redistribution layers(RDLs) electrically connected to the bond pads exposed through the firstlower passivation layer, forming a first upper passivation layer on thesecond surface of the semiconductor die, forming vias electricallyconnected to the first RDLs to pass through the encapsulant, formingsecond RDLs electrically connected to the vias, forming a second upperpassivation layer covering the second RDLs and the first upperpassivation layer to expose the second RDLs, and forming solder ballselectrically connected to the exposed second RDLs.

The forming of the first RDLs may, for example, comprise forming thefirst RDLs to fill the openings.

The forming of the first RDLs may, for example, comprise forming thefirst RDLs to extend to the outside of the semiconductor die (e.g.,extend to a position outside the footprint of the semiconductor die).

The forming of the first RDLs may, for example, comprise forming thefirst RDLs such that one end of each of the first RDLs is electricallyconnected to each of the bond pads and the other end of each of thefirst RDLs may, for example, be connected to the vias.

After the forming of the first RDLs, the fabricating method may, forexample, further comprise forming a second lower passivation layer tocover the first lower passivation layer and the first RDLs.

After the forming of the second lower passivation layer, the fabricatingmethod may, for example, further comprise grinding the second surface ofthe semiconductor die and the encapsulant for removal.

As described above, in an example finger print sensor package and anexample fabricating method thereof according to various aspects of thepresent disclosure, a separate printed circuit board (PCB) might not beused, thereby fabricating an ultra-slim finger print sensor having athickness of 500 μm or less.

Various aspects of the present disclosure will be more apparent from thefollowing detailed description taken in conjunction with theaccompanying drawings.

Hereinafter, examples of various embodiments of the disclosure will bedescribed in detail with reference to the accompanying drawings suchthat they can readily be made and used by those skilled in the art.

FIG. 1 is a cross-sectional view of a package of a finger print sensoraccording to an embodiment of the present disclosure.

Referring to FIG. 1, the finger print sensor package 100 according to anembodiment of the present disclosure may comprise a semiconductor die110, an encapsulant 120, a first passivation layer 130, a firstredistribution layer (RDL) 140, a protection layer 150, a via 160, asecond RDL 165, a second passivation layer 170 and land grid array (LGA)lands 180.

The semiconductor die 110 is generally made of a silicon material andhas a plurality of semiconductor devices formed therein. In addition,the semiconductor die 110 may comprise a first surface 110 a and asecond surface 110 b opposite to and facing each other. A plurality ofbond pads 111 and a sensor 112 are formed on the first surface 110 a ofthe semiconductor die 110. The bond pads 111 are generally electricalcontacts for inputting/outputting electrical signals to/from thesemiconductor die 110 and are plurally provided at spaced-apartlocations on the first surface 110 a. The sensor 112, for example,photographs a finger print image, and an electrical signal of the fingerprint image is input/output through the bond pads 111.

The encapsulant 120 is formed to enclose the second surface 110 b andside surfaces (e.g., side surfaces connecting the first surface 110 aand the second surface 110 b) of the semiconductor die 110. In addition,the encapsulant 120 may extend horizontally from the first surface 110 aof the semiconductor die 110, for example while not covering the firstsurface 110 a. The encapsulant 120 may, for example, seal thesemiconductor die 110 to protect the semiconductor die 110 from heat,moisture or shock, and may, for example, be formed using an epoxymolding compound (EMC), painting, or printing.

The first passivation layer 130 may, for example, be formed to cover thefirst surface 110 a of the semiconductor die 110 and the encapsulant120. The first passivation layer 130 may, for example, electricallyinsulate the semiconductor die 110 at regions other than the bond pads111. In addition, the first passivation layer 130 may have openingsformed at respective portions adjacent to the bond pads 111 to exposethe bond pads 111. The openings may, for example, provide paths throughwhich the bond pads 111 may be electrically connected to an externaldevice.

The first RDL 140 may, for example, be formed under the firstpassivation layer 130 to extend to the outside of the semiconductor die110 (e.g., extend to or near to the outside). The first RDL 140comprises a first end 141 of the first RDL 140 formed while filling theopenings (e.g., the openings in the first passivation layer 130). Thefirst RDL 140 is electrically connected to the bond pads 111 of thesemiconductor die 110 through the first end 141 of the first RDL 140.

The first RDL 140 redistributes electrical paths of the semiconductordie 110. For example, the first RDL 140 redistributes electrical pathsto connect the bond pads 111 to the via 160, irrespective of locationsof the bond pads 111. The first RDL 140 may, for example, be made ofcopper or an equivalent thereof.

The protection layer 150 is formed, for example, to cover the firstpassivation layer 130 and the first RDL 140. The protection layer 150may, for example, be formed on an outer surface of the finger printsensor package 100 and protect the finger print sensor package 100 fromthe outer environment. In addition, the protection layer 150 may, forexample, have a thickness of 200 μm or less. If the thickness of theprotection layer 150 is greater than 200 μm, the sensor 112 might not beable to reliably photograph an image through the protection layer 150,which is not desirable.

The protection layer 150 and the encapsulant 120 may, for example, bemade of the same material. A semiconductor package may undergodeformation due to heat generated during operation. The encapsulant 120and the protection layer 150 may be formed using the same material tomake the encapsulant 120 and the protection layer 150 have the samecoefficient of thermal expansion (CTE), thereby minimizing deformationdue to heat. Alternatively, for example, different materials having thesame or substantially similar respective CTEs (e.g., within 2%, 5%, or10%) may be used.

In FIG. 1, the finger print sensor package 100 comprises the protectionlayer 150. However, the finger print sensor package 100 might notcomprise the protection layer 150.

The via 160 is connected to the second end of the first RDL 140 and isformed to pass through the encapsulant 120. In addition, the via 160 isconnected to the second RDL 165 formed on the encapsulant 120. In such amanner, the via 160 connects the first RDL 140 to the second RDL 165.

The second RDL 165 redistributes the electrical paths of thesemiconductor die 110. That is to say, the second RDL 165 redistributesthe electrical paths through which the lands of the LGA 180 areconnected to be matched with external circuit patterns. The via 160 andthe second RDL 165 may, for example, be made of copper or an equivalentthereof.

In addition, referring to FIG. 1, the second RDL 165 may be formed inplurality, for example where the plurality of second RDLs 165 areseparated from each other by spaced-apart regions. The plurality ofsecond RDLs 165 may, for example, be connected to the plurality of bondpads 111 of the semiconductor die 110 in one-to-one correspondence.

The second passivation layer 170 is formed on the encapsulant 120 andthe second RDLs 165. The second passivation layer 130 may, for example,electrically insulate the second RDLs 165 from an external region.

The second passivation layer 170 comprises first regions 171 throughwhich the second RDLs 165 are exposed, and second regions 172 formed tocover portions of the second RDLs 165 and spaced-apart regions betweenthe second RDLs 165. The second RDLs 165 exposed through the firstregions 171 may be paths through which the second RDLs 165 areelectrically connected to the external region. In addition, since thesecond regions 172 cover the spaced-apart regions between the secondRDLs 165, the plurality of second RDLs 165 may be further insulated orisolated from each other.

The LGA lands 180 are formed on the first regions 171 of the secondpassivation layer 170, that is, the exposed second RDLs 165. The LGAlands 180 establish paths through which the semiconductor die 110 may beelectrically connected to an external circuit. In addition, the LGAlands 180 may be further electrically insulated or isolated from eachother by the second regions 172 of the second passivation layer 170. Inthe illustrated embodiment of FIG. 1, the LGA lands 180 are formed onthe first regions 171, but aspects of the present disclosure are notlimited thereto. For example, balls or other electrically connectivestructures may be formed on the first regions 171, instead of the LGAlands 180.

As described above, in the finger print sensor package 100 according toan example embodiment of the present disclosure, the first RDL 140 andthe second RDL 165 may be formed on and under the semiconductor die 110,and the first RDL 140 and the second RDL 165 may be electricallyconnected to each other through the via 160. In such an exampleconfiguration, among other configurations, an ultra-slim package fingerprint sensor having a thickness of 500 μm or less may be fabricatedwithout using a separate printed circuit board (PCB) or other substrate.

Hereinafter, a package of a finger print sensor according to anotherexample embodiment of the present disclosure will be described.

FIG. 2 is a plan view illustrating a semiconductor die (110), anencapsulant (120) and a first redistribution layer (140) in a package ofa finger print sensor according to another embodiment of the presentdisclosure. The present example embodiment illustrated in FIG. 2 issubstantially the same as the previous example embodiment illustrated inFIG. 1, except for example that a ground pattern may be formed by atleast one first RDL 140. The following description will focus ondifferences between the present and previous example embodiments.

In the finger print sensor package according to the example embodimentshown in FIG. 2, at least one first RDL 140 may be formed as a groundRDL 240 having a ground pattern.

The finger print sensor 112 may, for example, photograph a finger printimage by touching a finger (e.g., by direct contact or via a protectionlayer). The ground RDL 240 may, for example, protect the sensor 112 frombeing damaged due to static electricity generated when the fingertouches the sensor 112 (e.g., electrostatic discharge). In such anexample configuration, since a separate material for preventing damagedue to static electricity might not be required, a simplified fingerprint sensor package can be fabricated.

Hereinafter, a package of a finger print sensor according to stillanother example embodiment of the present disclosure will be described.

FIG. 3 is a cross-sectional view of a package of a finger print sensoraccording to still another example embodiment of the present disclosure.

Referring to FIG. 3, the finger print sensor package 300 according to anexample embodiment of the present disclosure comprises a semiconductordie 310, an encapsulant 320, a first lower passivation layer 330, firstRDLs 340, a second lower passivation layer 350, a first upperpassivation layer 360, vias 370, second RDLs 375, a second upperpassivation layer 380 and solder balls 390. The following descriptionwill focus on differences between the present and previous embodiments.Note that the features of the example embodiments discussed herein maybe interchanged (e.g., features of the example embodiment shown in FIG.3 may be incorporated into the other example embodiments disclosedherein, and vice versa).

The semiconductor die 310 may generally be made of a silicon materialand have a plurality of semiconductor devices formed therein. Inaddition, the semiconductor die 310 may comprise a first surface and asecond surface opposite to and facing each other. A plurality of bondpads 311 and a sensor 312 are formed on the first surface of thesemiconductor die 310. The bond pads 311 may, for example, compriseportions for inputting/outputting electrical signals to/from thesemiconductor die 310 and may be plurally provided at spaced-apartlocations on the first surface. The sensor 312 may, for example,photograph or otherwise capture a finger print image, and an electricalsignal of the finger print image may be input/output through the bondpads 311.

The encapsulant 320 may be formed to enclose side surfaces of thesemiconductor die 310 (e.g., side surfaces connecting the first andsecond surfaces), except for the first and second surfaces of thesemiconductor die 310. In addition, the encapsulant 320 may extendhorizontally from the first and second surfaces of the semiconductor die310. Since the example encapsulant 320 is formed to cover only the sidesurfaces of the semiconductor die 310, the finger print sensor package300 can be fabricated with a reduced thickness. The encapsulant 320 may,for example, be formed using an epoxy molding compound (EMC), painting,or printing.

The first lower passivation layer 330 is formed to cover the firstsurface of the semiconductor die 310 and a bottom surface of theencapsulant 320 extending horizontally from the first surface of thesemiconductor die 310. The first lower passivation layer 330 may, forexample, further electrically insulate (or isolate) the semiconductordie 310 from regions other than the bond pads 311. In addition, thefirst lower passivation layer 330 has openings to expose the bond pads311. The openings are paths through which the bond pads 311 may beelectrically connected to an external device.

The first RDLs 340 are formed under the first passivation layer 330 toextend to the outside of the semiconductor die 310 (e.g., extend to aposition outside the footprint of the semiconductor die). Each of thefirst RDLs 340, for example, comprises one end formed while filling theopenings in the first passivation layer 330. The first RDLs 340 areelectrically connected to the bond pads 311 of the semiconductor die 310through a first end of each of the first RDLs 340.

The second lower passivation layer 350 is formed to cover the firstlower passivation layer 330 and the first RDLs 340. The second lowerpassivation layer 350 is formed on an outer surface of the finger printsensor package 300 (e.g., over the first lower passivation layer 330)and protects the finger print sensor package 300 from the outerenvironment. In addition, the second lower passivation layer 350 may beformed using the same material with the encapsulant 320 and the firstlower passivation layer 330 to make the encapsulant 320, the first lowerpassivation layer 330 and the second lower passivation layer 350 havethe same coefficient of thermal expansion (CTE), thereby minimizingdeformation due to heat. Alternatively, for example, different materialshaving the same or substantially similar respective CTEs (e.g., within2%, 5%, or 10%) may be used.

The first upper passivation layer 360 is formed to cover the secondsurface of the semiconductor die 310 and the top surface of theencapsulant 320 extending horizontally from the second surface of thesemiconductor die 310. The first upper passivation layer 360 may, forexample, electrically insulate (or isolate) the semiconductor die 310from an external region.

Each of the vias 370 is connected to the second end of each of the firstRDLs 340 and is formed to pass through the encapsulant 320, the firstlower passivation layer 330 and the first upper passivation layer 360.In addition, the vias 370 are connected to the second RDLs 375 formed onthe first upper passivation layer 360. In such a manner, the vias 370connect the first RDLs 340 to the second RDLs 375.

The second upper passivation layer 380 is formed to cover the firstupper passivation layer 360 and portions of the second RDLs 375. Thesecond upper passivation layer 380 may further electrically insulate (orinsulate) the second RDLs 375 from an external region. The second upperpassivation layer 380 comprises a first region through which the secondRDLs 375 are exposed, and a second region 382 formed to cover portionsof the second RDLs 375 and spaced-apart regions between the second RDLs375. The first region establishes paths through which the second RDLs375 may be electrically connected to an external circuit. In addition,since the second region 382 is formed to cover the spaced-apart regionsbetween the second RDLs 375, the plurality of second RDLs 375 arefurther insulated (or isolated) from each other.

The solder balls 390 are electrically connected to the first region 381of the second upper passivation layer 380, that is, the exposed portionsof the second RDLs 375. The solder balls 390 establish paths throughwhich the semiconductor die 310 may be electrically connected to anexternal circuit.

As described above, in the finger print sensor package 300 according toan example embodiment of the present disclosure, the encapsulant 320encloses only side surfaces of the semiconductor die 310, and the firstupper passivation layer 360, which is relatively thin, is formed tocover the second surface of the semiconductor die 310. In such anexample configuration, an ultra-slim finger print sensor package can befabricated.

Hereinafter, a fabricating method of a package of a finger print sensoraccording to an example embodiment of the present disclosure will bedescribed.

FIG. 4 is a flowchart illustrating a fabricating method of a package ofa finger print sensor according to an example embodiment of the presentdisclosure.

As illustrated in FIG. 4, a fabricating method of a finger print sensorpackage (e.g., the finger print sensor package 100 illustrated in FIG.1, or variants thereof) according to an example embodiment of thepresent disclosure may comprise forming an encapsulant (S1), forming afirst passivation layer (S2), forming openings (S3), forming first RDLs(S4), forming a protection layer (S5), grinding the encapsulant (S6),forming vias (S7), forming second RDLs (S8), forming a secondpassivation layer (S9), forming LGAs lands (S10), and removing theprotection layer (S11).

FIGS. 5A to 5K are cross-sectional views sequentially illustratingexample process steps of the example fabricating method of a package ofa finger print sensor shown in FIG. 4.

Hereinafter, the example fabricating method of a finger print sensorpackage (e.g., the example finger print sensor package 100 illustratedin FIG. 1 and discussed previously or variants thereof) according to anexample embodiment of the present disclosure will be described in detailwith reference to FIGS. 4 and 5A to 5K.

Referring to FIGS. 4 and 5A, in the forming of the encapsulant (S1), theencapsulant 120 is formed on the semiconductor die 110. Thesemiconductor die 110 comprises a first surface 110 a having a pluralityof bond pads 111 and a sensor 112 formed thereon and a second surface110 b opposite to and facing the first surface 110 a. In addition, theencapsulant 120 is formed to horizontally extend from the first surface110 a so as to enclose the second surface 110 b and side surfaces of thesemiconductor die 110. The encapsulant 120 may, for example, be formedusing an epoxy molding compound (EMC), painting, or printing.

Referring to FIGS. 4 and 5B, in the forming of a first passivation layer(S2), the first passivation layer 130 is formed on the first surface 110a of the semiconductor die 110. The first passivation layer 130 isformed to cover the first surface 110 a and the encapsulant 120 thatextends horizontally from the first surface 110 a.

Referring to FIGS. 4 and 5C, in the forming of openings (S3), theopenings 131 are formed in some regions of the first passivation layer130. The forming of openings (S3), for example, may comprise forming aphotoresist on the first passivation layer 130 and then etching andremoving the photoresist. The openings 131 may, for example, be formedby etching the first passivation layer 130 using the photoresist. Theopenings 131 expose the bond pads 111.

Referring to FIGS. 4 and 5D, in the forming of first RDLs (S4), thefirst RDLs 140 are formed on the first passivation layer 130 (e.g.,below the first passivation layer 130 as it is shown in FIG. 5D) toextend to the outside of the semiconductor die 110 (e.g., outside thefootprint of the semiconductor die 110). Each of the first RDLs 140 may,for example, be formed to have a first end 141 filling each of theopenings 131.

The first RDLs 140 may, for example, be formed by electroplating. Theforming of the first RDLs (S4) may, for example, comprise coating andpatterning a photoresist on a region of the first passivation layer 130,other than potential regions where the first RDLs 140 are to be formed.In addition, a metal seed layer may be formed between the potentialregions where the first RDLs 140 are to be formed, that is, patterns ofthe photoresist. Thereafter, current may be made to flow using the metalseed layer as a seed, thereby forming the first RDLs 140. After theforming of the first RDLs 140, the photoresist is removed. The firstRDLs 140 may, for example, be made of copper or an equivalent thereof.As illustrated in FIG. 2 and discussed previously, the forming of thefirst RDLs (S4) may comprise forming one or more ground RDLs thatsurround the sensor 112, or any portion of the semiconductor die 110, on1, 2, 3 or 4 sides.

Referring to FIGS. 4 and 5E, in the forming of a protection layer (S5),the protection layer 150 is formed to cover the first passivation layer130 and the first RDLs 140 (e.g., below the first passivation layer 130and first RDLs 140 as illustrated in FIG. 5E).

In the configuration of the finger print sensor package according to anexample embodiment of the present disclosure, the protection layer 150is expressed as it is, but may serve as a wafer supporting system (WSS)for supporting and fixing a semiconductor wafer in terms of afabricating process. Therefore, in describing the finger print sensorpackage 100, the protection layer and the WSS may be considered the samewith each other in view of configuration, although they are differentlynamed.

The protection layer 150 is formed under the first passivation layer 130and the first RDLs 140 and fixedly supports the semiconductor die 110.The protection layer 150 may, for example, be formed to have a thicknessof 200 to 300 μm. In addition, the protection layer 150 and theencapsulant 120 may be made of the same material, or for exampledifferent materials with same or similar respective CTEs.

Referring to FIGS. 4 and 5F, in the grinding of the encapsulant (S6),the encapsulant 120 is subjected to grinding (or alternative thinningoperation). The grinding of the encapsulant (S6) may, for example,facilitate the formation of vias 160 in a subsequent process by reducingthe thickness of the encapsulant 120. Here, the semiconductor die 110 isfixed to and/or supported by the protection layer 150, so that impactsapplied thereto during grinding or other operations may be dampened.

Referring to FIGS. 4 and 5G, in the forming of vias (S7), the vias 160are formed to pass through the encapsulant 120. The vias 160 areelectrically connected to the second end of each of the first RDLs 140(e.g., the ends of the first RDLs 140 that are positioned outside thefootprint of the first semiconductor die 110) and may, for example, beconnected to the second RDLs 165 to be formed later. The forming of thevias (S7) may, for example, comprise forming holes in the encapsulant120 using laser irradiation, drilling or chemically etching and thenfilling the holes with copper or an equivalent thereof.

Referring to FIGS. 4 and 5H, in the forming of second RDLs (S8), thesecond RDLs 165 are formed on the encapsulant 120 (e.g., above theencapsulant 120 as illustrated in FIG. 5H). The second RDLs 165 areelectrically connected to the vias 160.

Specifically, referring to FIG. 5H, the second RDLs 165 may be plurallyformed to be spaced apart from each other. The plurality of second RDLs165 are formed to be spaced apart from each other by spaced-apartregions, and the plurality of second RDLs 165 may be connected to theplurality of bond pads 111 of the semiconductor die 110, for example inone-to-one correspondence.

Like the first RDLs 140, the second RDLs 165 may, for example, be formedby electroplating and may be made of copper or an equivalent thereof.

Referring to FIGS. 4 and 5I, in the forming of a second passivationlayer (S9), the second passivation layer 170 is formed on theencapsulant 120 and the second RDLs 165. The forming of a secondpassivation layer (S9) comprises forming a photoresist on regionsthrough which the second RDLs 165 are to be exposed and then filling theother regions with the second passivation layer 170. Therefore, thesecond passivation layer 170 may comprise first regions 171 throughwhich the second RDLs 165 are exposed, and second regions 172 formed tocover portions of the second RDLs that are not to be exposed and tocover the spaced-apart regions between the second RDLs 165. The secondregions 172 fill the spaced-apart regions of the second RDLs 165,thereby further electrically insulating (or isolating) the plurality ofsecond RDLs 165 from each other.

Referring to FIGS. 4 and 5J, in the forming LGA lands (S10), the LGAlands 180 are formed on the second RDLs 165, or portions thereof, thatare exposed through the second passivation layer 170. The LGA lands 180may, for example, be formed while filling the first regions 171 of thesecond passivation layer 170. In addition, the LGA lands 180 may befurther electrically insulated (or isolated) from each other by thesecond regions 172 of the second passivation layer 170. In an exampleembodiment of the present disclosure, the LGA lands 180 may be formed inthe first regions 171. However, instead of the LGA lands 180, conductiveballs (e.g., solder balls) or other conductive structures may be formedin the first regions 171.

Referring to FIGS. 4 and 5K, in the removing of the protection layer(S11), the protection layer 150 may, for example, be subjected togrinding (or another thinning process) for removal. In the removing ofthe protection layer (S11), the grinding may, for example, be performedsuch that the protection layer 150 has a thickness of 200 μm or less. InFIG. 4K, the protection layer 150 is included in the finger print sensorpackage 100. However, the protection layer 150 need not be provided inthe finger print sensor package 100.

As described above, in the finger print sensor package 100 according toan example embodiment of the present disclosure, the first RDLs 140 andthe second RDLs 165 (or respective portions thereof) are formed over andunder the semiconductor die 110, thereby electrically connecting thefirst RDLs 140 and the second RDLs 165 to each other through the vias160, which for example are located outside the footprint of thesemiconductor die 110. In such an example configuration, an ultra-slimfinger print sensor package having a thickness of 500 μm or less may befabricated without using a separate printed circuit board (PCB) or othersubstrate.

FIG. 6 is a flowchart illustrating a fabricating method of a package ofa finger print sensor according to another example embodiment of thepresent disclosure.

As illustrated in FIG. 6, a fabricating method of a finger print sensorpackage (e.g., the finger print sensor package 300 illustrated in FIG.3, or variants thereof) according to an example embodiment of thepresent disclosure may comprise forming an encapsulant (S21), forming afirst lower passivation layer (S22), forming openings (S23), formingfirst RDLs (S24), forming a second lower passivation layer (S25),grinding (S26), forming a first upper passivation layer (S27), formingvias (S28), forming second RDLs (S29), forming a second upperpassivation layer (S30) and forming solder balls (S31).

FIGS. 7A to 7K are cross-sectional views sequentially illustratingexample process steps of the fabricating method of a package of a fingerprint sensor shown in FIG. 6.

Hereinafter, the example fabricating method of a finger print sensorpackage (e.g., the example finger print sensor package 300 illustratedin FIG. 3 and discussed previously or variants thereof) according to anexample embodiment of the present disclosure will be described in detailwith reference to FIGS. 6 and 7A to 7K.

Referring to FIGS. 6 and 7A, in the forming of an encapsulant (S21), theencapsulant 320 is formed on (or around) the semiconductor die 310. Thesemiconductor die 310 comprises a first surface having a plurality ofbond pads 311 and a sensor 312 formed thereon and a second surfaceopposite to and facing the first surface. In addition, the encapsulant320 is formed to enclose side surfaces of the semiconductor die 310,excluding the first and second surfaces. For example, the encapsulant320 may be formed on regions horizontally extending from the first andsecond surfaces. The encapsulant 320 may, for example, be formed usingan epoxy molding compound (EMC), painting, or printing.

Referring to FIGS. 6 and 7B, in the forming of a first lower passivationlayer (S22), the first lower passivation layer 330 is formed on thefirst surface of the semiconductor die 310. The first lower passivationlayer 330 is formed to cover the first surface and a bottom surface ofthe encapsulant 320 that extends horizontally from the first surface ofthe semiconductor die 310.

Referring to FIGS. 6 and 7C, in the forming of openings (S23), theopenings 331 are formed in some regions of the first lower passivationlayer 330. The forming of openings (S23) may, for example compriseforming a photoresist on the first lower passivation layer 330 and thenetching and removing the photoresist. The openings 331 may, for example,be formed by etching the first lower passivation layer 330 using thephotoresist. The openings 331 expose the bond pads 311.

Referring to FIGS. 6 and 7D, in the forming of first RDLs (S24), thefirst RDLs 340 are formed on the first lower passivation layer 330(e.g., below the first lower passivation layer 330 as it is shown inFIG. 7D) to extend to the outside of the semiconductor die 310 (e.g.,outside the footprint of the semiconductor die 110). A first end of eachof the first RDLs 340 may, for example, be formed while filling theopenings 331.

The first RDLs 340 may, for example, be formed by electroplating. Theforming of the first RDLs (S24) may, for example, comprise coating andpatterning a photoresist on a region of the first lower passivationlayer 330, other than potential regions where the first RDLs 340 are tobe formed. In addition, a metal seed layer may be formed between thepotential regions where the first RDLs 340 are to be formed, that is,patterns of the photoresist. Thereafter, current may be made to flowusing the metal seed layer as a seed, thereby forming the first RDLs340. After the forming of the first RDLs 340, the photoresist isremoved. The first RDLs 340 may, for example, be made of copper or anequivalent thereof. As illustrated in FIG. 2 and discussed previously,the forming of the first RDLs (S4) may comprise forming one or moreground RDLs that surround the sensor 312, or any portion of thesemiconductor die 110, on 1, 2, 3 or 4 sides.

Referring to FIGS. 6 and 7E, in the forming a second lower passivationlayer (S25), the second lower passivation layer 350 may be formed tocover the first lower passivation layer 330 and the first RDLs 340. Thesecond lower passivation layer 350 may, for example, serve as a wafersupporting system (WSS) for supporting and fixing a semiconductor wafer.That is to say, the second lower passivation layer 330, formed on thefirst lower passivation layer 330 (e.g., under the lower passivationlayer 330 as illustrated in FIG. 7E) and the first RDLs 340, fixedlysupporting the semiconductor die 310. The second lower passivation layer350 and the encapsulant 320 may, for example, be made of the samematerial, or for example different materials with same or similarrespective CTEs).

Referring to FIGS. 6 and 7F, in the grinding (S26), the semiconductordie 310 and the encapsulant 320 are subjected to grinding (oralternative thinning operation). The grinding (S26) may, for example,facilitate the formation of vias 370 in a subsequent process by reducingthe thickness of the encapsulant 320. Here, the semiconductor die 310 isfixed to and/or supported by the second lower passivation layer 350, sothat impacts applied thereto during grinding or other operations may bedampened.

Referring to FIGS. 6 and 7G, in the forming of a first upper passivationlayer (S27), the first upper passivation layer 360 is formed on thesecond surface of the semiconductor die 310. The first upper passivationlayer 360 may, for example, be formed to cover the second surface of thesemiconductor die 310 and a top surface of the encapsulant 320 thatextends horizontally from the second surface of the semiconductor die310.

Referring to FIGS. 6 and 7H, in the forming of vias (S28), the vias 370are formed to pass through the encapsulant 320. The vias 370 may, forexample, be formed to pass through the encapsulant 320, the first lowerpassivation layer 330 and the first upper passivation layer 360. Thevias 370 are electrically connected to the second end of each of thefirst RDLs 340 (e.g., the ends of the first RDLs 340 that are positionedoutside the footprint of the first semiconductor die 310) and may, forexample, be connected to the second RDLs 375 to be formed later. Thevias 370 may, for example, be formed by forming holes in the encapsulant320 using laser irradiation, drilling or chemically etching and thenfilling the holes with copper or an equivalent thereof.

Referring to FIGS. 6 and 7I, in the forming of second RDLs (S29), thesecond RDLs 375 are formed on the first upper passivation layer 360(e.g., above the first upper passivation layer 360 as illustrated inFIG. 7I). The second RDLs 375 are electrically connected to the vias370. The second RDLs 375 may, for example, be spaced apart from eachother by spaced-apart regions. Like the first RDLs 340, the second RDLs375 may, for example, be formed by electroplating and may be made ofcopper or an equivalent thereof.

Referring to FIGS. 6 and 7J, in the forming of a second upperpassivation layer (S30), the second upper passivation layer 380 isformed on the first upper passivation layer 360 and the second RDLs 375.The second upper passivation layer 380 may, for example, be formed byforming a photoresist on regions through which the second RDLs 375 areexposed and then filling the other regions with the second upperpassivation layer 380. Therefore, the second upper passivation layer 380may comprise first regions 381 through which the second RDLs 375 areexposed, and second regions 382 formed to cover portions of the secondRDLs 375 that are not to be exposed and to cover the spaced-apartregions between the second RDLs 375. The second regions 382 fill thespaced-apart regions of the second RDLs 375, thereby furtherelectrically insulating (or isolating) the plurality of second RDLs 375from each other.

Referring to FIGS. 6 and 7K, in the forming of solder balls (S31),solder balls 390 (or other conductive balls or connecting structures)are formed on the second RDLs 375 exposed through the second upperpassivation layer 380. The solder balls 390 may, for example, be formedwhile filling the first regions 381 of the second upper passivationlayer 380 (e.g., filling the regions 381 with solder balls, solderpaste, etc.). In addition, the solder balls 390 may be furtherelectrically insulated from each other by the second regions 382 of thesecond upper passivation layer 380.

As described above, in a finger print sensor package 300 according to anexample embodiment of the present disclosure, the encapsulant 320 mightenclose only the side surfaces of the semiconductor die 310, and thefirst upper passivation layer 360, which is relatively thin, might thencover the second surface of the semiconductor die 310. In such anexample configuration, an ultra-slim finger print sensor package (e.g.,having a thickness of 500 um or less) may be fabricated, for examplewithout using a separate printed circuit board (PCB) or other substrate.

This disclosure provides various example embodiments of a package of afinger print sensor and a fabricating method thereof. The scope of thepresent disclosure is not limited by these example embodiments. Numerousvariations, whether explicitly provided for by the specification orimplied by the specification, such as variations in structure,dimension, type of material and manufacturing process, may beimplemented by one skilled in the art in view of this disclosure withoutdeparting from the spirit and scope of the present disclosure, forexample as set forth in the following claims.

What is claimed is:
 1. A sensor device comprising: a semiconductor diecomprising a first die side, a second die side opposite the first dieside, and lateral die sides extending between the first and second diesides, where the first die side comprises sensor circuitry and a bondpad; a surrounding structure that laterally surrounds at least thelateral die sides, wherein the surrounding structure comprises firstdielectric material (DM1) that comprises a first DM1 side, a second DM1side, and lateral DM1 sides extending between the first and second DM1sides; a conductive via structure passing through at least the firstdielectric material between the first DM1 side and the second DM1 side;a first conductive layer extending over at least a portion of the firstdie side and over at least a portion of the first DM1 side, and coupledto the bond pad and to a first via end of the conductive via structure;a second conductive layer coupled to a second end of the conductive viastructure; and a first dielectric layer that covers the first die sideand the first DM1 side, wherein the first dielectric layer comprises: afirst aperture that extends vertically completely through the firstdielectric layer and through which the first conductive layer is coupledto the bond pad; and a second aperture that extends verticallycompletely through the first dielectric layer and through which thefirst conductive layer is coupled to the first via end.
 2. The sensordevice of claim 1, wherein the conductive via structure comprises acontinuous layer of a metal that is vertically taller than thesemiconductor die.
 3. The sensor device of claim 1, comprising a seconddielectric layer that covers at least a portion of the each of the firstconductive layer and the first dielectric layer.
 4. The sensor device ofclaim 3, wherein each of the first and second dielectric layerscompletely vertically covers the sensor circuitry.
 5. The sensor deviceof claim 1, wherein the surrounding structure comprises a seconddielectric material that covers the second die side and the second DM1side.
 6. The sensor device of claim 5, comprising a conductive ballcoupled to the second conductive layer through an aperture that extendsvertically completely through the second dielectric material.
 7. Thesensor device of claim 1, wherein the first dielectric material (DM1)directly contacts at least one of the lateral die sides.
 8. The sensordevice of claim 1, wherein the conductive via structure comprises acylindrical copper column.
 9. The sensor device of claim 8, wherein thefirst dielectric material of the surrounding structure directly contactsthe cylindrical copper column.
 10. The sensor device of claim 1, whereinthe first conductive layer is directly connected to the bond pad and tothe first via end.
 11. The sensor device of claim 1, wherein the firstdielectric material of the surrounding structure comprises a moldingcompound.
 12. The sensor device of claim 1, wherein the sensor circuitrycomprises image sensing circuitry.
 13. The sensor device of claim 1,wherein first die side and the first DM1 side are generally coplanar.14. A sensor device comprising: a semiconductor die comprising a firstdie side, a second die side opposite the first die side, and lateral diesides extending between the first and second die sides, where the firstdie side comprises sensor circuitry and a bond pad; a surroundingstructure that laterally surrounds at least the lateral die sides,wherein the surrounding structure comprises first dielectric material(DM1) that comprises a first DM1 side, a second DM1 side, and lateralDM1 sides extending between the first and second DM1 sides; a conductivevia structure passing through at least the first dielectric materialbetween the first DM1 side and the second DM1 side; a first conductivelayer extending over at least a portion of the first die side and overat least a portion of the first DM1 side, and coupled to the bond padand to a first via end of the conductive via structure; a secondconductive layer extending over at least a portion of the second DM1side, and coupled to a second end of the conductive via structure; afirst dielectric layer that vertically covers at least the first DM1side and completely vertically covers the sensor circuitry; and a seconddielectric layer that vertically covers at least the first dielectriclayer, the first DM1 side, and the first conductive layer.
 15. Thesensor device of claim 14, wherein the semiconductor die is rectangularshaped with a first and second of the lateral die sides longer than athird and fourth of the lateral die sides.
 16. The sensor device ofclaim 14, wherein the first conductive layer extends from the bond padtoward one of the lateral die sides and past the first via end, but doesnot extend entirely to any of the lateral DM1 sides.
 17. The sensordevice of claim 14, wherein: the first dielectric layer comprises afirst aperture through which the first conductive layer is coupled tothe bond pad and a second aperture through which the first conductivelayer is coupled to the first via end; and the second dielectric layercompletely vertically covers the sensor circuitry.
 18. The sensor deviceof claim 14, wherein the second conductive layer extends over at least aportion of the second die side.
 19. A sensor device comprising: asemiconductor die comprising a first die side, a second die sideopposite the first die side, and lateral die sides extending between thefirst and second die sides, where the first die side comprises sensorcircuitry and a bond pad; a surrounding structure that laterallysurrounds at least the lateral die sides, wherein the surroundingstructure comprises a first dielectric material that comprises a firstDM1 side, a second DM1 side, and lateral DM1 sides extending between thefirst and second DM1 sides; a conductive via structure passing throughat least the first dielectric material between the first DM1 side andthe second DM1 side; a first conductive layer extending over at least aportion of the first die side and over at least a portion of the firstDM1 side, and coupled to the bond pad and to a first via end of theconductive via structure; a second conductive layer extending over atleast a portion of the second DM1 side, and coupled to a second end ofthe conductive via structure; and a first conductive trace, wherein: thefirst conductive trace runs in a plane that is parallel to the first dieside and separated from the first die side; and the first conductivetrace runs alongside a first of the lateral die sides along at leastmost of the length of the first of the lateral die sides.
 20. A methodof making a sensor device, the method comprising: providing asemiconductor die comprising a first die side, a second die sideopposite the first die side, and lateral die sides extending between thefirst and second die sides, where the first die side comprises sensorcircuitry and a bond pad; laterally surrounding at least the lateral diesides with a surrounding structure that comprises first dielectricmaterial (DM1), wherein the first dielectric material comprises a firstDM1 side, a second DM1 side, and lateral DM1 sides extending between thefirst and second DM1 sides, and wherein a conductive via structurepasses through at least the first dielectric material between the firstDM1 side and the second DM1 side; forming a first conductive layerextending over at least a portion of the first die side and over atleast a portion of the first DM1 side, and coupled to the bond pad andto a first via end of the conductive via structure; forming a secondconductive layer coupled to a second end of the conductive viastructure; and forming a first dielectric layer that covers the firstdie side and the first DM1 side, wherein the first dielectric layercomprises: a first aperture that extends vertically completely throughthe first dielectric layer and through which the first conductive layeris coupled to the bond pad; and a second aperture that extendsvertically completely through the first dielectric layer and throughwhich the first conductive layer is coupled to the first via end. 21.The method of claim 20, comprising: forming a second dielectric layerthat covers at least the first conductive layer and the first dielectriclayer.
 22. The method of claim 20, comprising forming a first conductivetrace, wherein: the first conductive trace runs in a plane that isparallel to the first die side and separated from the first die side;and the first conductive trace runs alongside a first of the lateral diesides along at least most of the length of the first of the lateral diesides.